Samsung Electronics launches the industry's first 24Gb GDDR7 DRAM chip, exceeding 40Gbps speeds. Fabricated using 5th-gen 10nm process and PAM3 tech, it boosts performance & efficiency by 30%. Designed for data centers and AI workstations, verification starts this year, mass production early 2025.
2024/10/18
SK hynix launched the GDDR7 DRAM chip with 32Gbps speed, 50% better efficiency, and 74% lower thermal resistance, ideal for AI, HPC, and autonomous driving.
2024/10/11
SK Hynix introduces the world's first 16Gb DDR5 DRAM chip using 6th gen 10nm tech, boosting productivity by 30%, speed by 11%, and efficiency by 9%.
2024/10/10
SK Hynix launches 12L HBM3E DRAM mass production, setting new global benchmarks for speed, capacity, and stability, strengthening AI memory leadership.
2024/10/09
SAMSUNG announces 12nm DDR5 DRAM with 23% lower power, 20% higher efficiency, and 7.2Gbps speed. AMD-compatible, mass production starts in H2 2023.
2024/10/08
Samsung's HBM3E 12H 24GB DRAM chip, stacking 12 layers of 24Gb DRAM, offers 36GB total capacity, 9.8Gbps data rate, and 1,250GB/s bandwidth with optimized thermal and power efficiency.
2024/10/07
Samsung AM9C1 is the industry's first automotive SSD featuring 8th Gen V-NAND tech. Delivers 4,400MB/s read speeds, AEC-Q100 Grade 2 certification, and PCIe 4.0 interface for autonomous driving and high-performance vehicle systems.
2024/09/26
Samsung starts mass production of its 9th-gen V-NAND QLC flash, featuring advanced technologies for higher density, faster speeds, and lower power use, to meet growing AI demands.
2024/09/16
