SK Hynix launches 12L HBM3E DRAM mass production, setting new global benchmarks for speed, capacity, and stability, strengthening AI memory leadership.
2024/10/09
SAMSUNG announces 12nm DDR5 DRAM with 23% lower power, 20% higher efficiency, and 7.2Gbps speed. AMD-compatible, mass production starts in H2 2023.
2024/10/08
Samsung's HBM3E 12H 24GB DRAM chip, stacking 12 layers of 24Gb DRAM, offers 36GB total capacity, 9.8Gbps data rate, and 1,250GB/s bandwidth with optimized thermal and power efficiency.
2024/10/07
三星推出业界首款基于第八代V-NAND技术的PCIe 4.0汽车级SSD AM9C1，提供高达4,400MB/s的读取速度和增强的可靠性，旨在满足自动驾驶车辆等高性能应用的需求。
2024/09/26
Dive into global electronics innovation, revolutionizing sports viewing: China's 8K debut at Paris Olympics, drone shows blending tech & art, smart cameras capturing every thrill. Explore tech's future in sports.
2024/07/29
Unleash electric vehicle innovation with NXP's S32K39 MCUs. High-performance, ASIL-D safety, TSN Ethernet, optimized for multi-motor control in efficient, cost-effective designs.
2024/07/07
Empower software-defined vehicles with NXP's automotive-grade S32N55 microprocessor. 16 lock-step Arm Cortex-R52 cores for high-performance, safe, and integrated control solutions.
2024/07/06
ST's ST54L NFC controller empowers secure mobile payments and digital wallets. With Thales security, enhanced NFC, 3.3MB memory, supports multi-services, eSIM on Google Pixel 8. Pioneering payment safety.
2024/07/05
